G12N60 A4D – IGBT Transistor HGTG12N60A4D

£4.95 Inc Tax

Manufacturer ON Semiconductor
Product Category IGBT Chip

HGTG12N60A4D

Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247

IGBT Single Transistor

 

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Description

Manufacturer ON Semiconductor
Product Category IGBT Chip

HGTG12N60A4D

Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247

IGBT Single Transistor

Product Technical Specifications

EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status NRND
HTS 8541.29.00.95
Channel Type N
Configuration Single
Maximum Collector-Emitter Voltage (V) 600
Maximum Gate Emitter Voltage (V) ±20
Typical Collector Emitter Saturation Voltage (V) 2
Maximum Continuous Collector Current (A) 54
Maximum Gate Emitter Leakage Current (uA) 0.25
Maximum Power Dissipation (mW) 167000
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging
Pin Count 3
Supplier Package TO-247
Standard Package Name TO-247
Mounting Through Hole
Package Height 20.82(Max)
Package Length 15.87(Max)
Package Width 4.82
PCB changed 3
Tab Tab
Lead Shape Through Hole